SPA11N80C3(2005) 查看數據表（PDF） - Infineon Technologies
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| SPA11N80C3 Datasheet PDF : 0 Pages | |||
SPP11N80C3
SPA11N80C3
13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP11N80C3
A
14 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
11
A
9
8
10 1
7
6
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
5
4
Tj(START)=25°C
3
2
Tj(START)=125°C
1
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
µs 10 4
tAR
15 Avalanche energy
EAS = f (Tj)
par.: ID = 2.2 A, VDD = 50 V
500
mJ
16 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
980 SPP11N80C3
V
400
350
300
250
200
150
100
50
0
20 40 60 80 100 120 °C 150
Tj
940
920
900
880
860
840
820
800
780
760
740
720
-60 -20
20
60 100 °C
180
Tj
Rev. 2.4
Page 8
2005-08-24
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