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SI8711BC-B-IP 查看數據表(PDF) - Silicon Laboratories

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SI8711BC-B-IP Datasheet PDF : 36 Pages
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Si87xx
Table 9. Absolute Maximum Ratings*
Parameter
Symbol
Min
Max
Unit
Storage Temperature
Operating Temperature
Junction Temperature
Average Forward Input Current
Si87xxA Devices
Si87xxB Devices
Si87xxC Devices
TSTG
TA
TJ
IF(AVG)
–65
+150
°C
–40
+125
°C
+140
°C
15
mA
30
mA
15
mA
Peak Transient Input Current
(< 1 µs pulse width, 300 ps)
IFTR
1
A
Reverse Input Voltage
Supply Voltage
Output Voltage
Enable Voltage
Output Sink Current
Average Output Current
Peak Output Current (VDD = 5 V)
Input Power Dissipation
Output Power Dissipation
Total Power Dissipation
Lead Solder Temperature (10 s)
VR
VDD
VOUT
VOUT
ISINK
IO(AVG)
IOPK
PI
PO
PT
–0.3
V
–0.5
36
V
–0.5
36
V
–0.5
VDD+0.5
V
15
mA
8
mA
75
mA
90
mW
50
mW
140
mW
260
°C
HBM Rating ESD
3
kV
Machine Model ESD
200
V
CDM
500
V
Maximum Isolation Voltage (1 s) SOIC-8
4500
VRMS
Maximum Isolation Voltage (1 s) DIP8
4500
VRMS
Maximum Isolation Voltage (1 s) SDIP6
6500
VRMS
Maximum Isolation Voltage (1 s) LGA8
6500
VRMS
*Note: Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to the conditions specified in the operational sections of this data sheet.
Preliminary Rev. 0.5
11

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