NGTB15N120LWG 查看數據表（PDF） - ON Semiconductor
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NGTB15N120LWG Datasheet PDF : 9 Pages
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NGTB15N120LWG
TYPICAL CHARACTERISTICS
16
200 V
14
400 V
600 V
12
10
8
6
4
2
0
0 25 50 75 100 125 150 175 200
QG, GATE CHARGE (nC)
Figure 7. Typical Gate Charge
3.5
3
VCE = 600 V
VGE = 15 V
Eon
2.5
IC = 15 A
Rg = 15 W
2
1.5
1
Eoff
0.5
0
0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 8. Energy Loss vs. Temperature
1000
tf
100
td(on)
td(off)
tr
10
VCE = 600 V
VGE = 15 V
IC = 15 A
Rg = 15 W
1
0 20 40 60 80 100 120 140 160
TEMPERATURE (°C)
Figure 9. Switching Time vs. Temperature
1000
tf
100
td(on)
td(off)
tr
10 VCE = 600 V
VGE = 15 V
TJ = 150°C
Rg = 15 W
1
8 10 12 14 16 18 20 22 24 26 28 30 32
IC, COLLECTOR (A)
Figure 11. Switching Time vs. IC
6
VCE = 600 V
5
VGE = 15 V
TJ = 150°C
Rg = 15 W
Eon
4
3
2
Eoff
1
0
8 10 12 14 16 18 20 22 24 26 28 30 32
IC, COLLECTOR (A)
Figure 10. Energy Loss vs. IC
6
VCE = 600 V
5
VGE = 15 V
IC = 15 A
TJ = 150°C
4
3
2
1
0
5 15 25 35 45 55 65 75 85
Rg, GATE RESISTOR (W)
Figure 12. Energy Loss vs. Rg
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4
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