NGTB15N120LWG 查看數據表（PDF） - ON Semiconductor
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NGTB15N120LWG Datasheet PDF : 9 Pages
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NGTB15N120LWG
TYPICAL CHARACTERISTICS
0.6
RqJC = 0.545
0.5
0.4
0.3 50% Duty Cycle
0.2
20%
0.1
10%
0
0.00001
5%
2%
Single Pulse
0.0001
0.001
Junction R1
Ci = ti/Ri
C1
0.01
PULSE TIME (sec)
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
R2
Rn Case
Ri (°C/W)
0.003407
0.001000
0.001000
0.090901
0.107824
ti (sec)
0.002935
0.031623
0.100000
0.003479
0.009274
0.021715 0.145627
0.130809 0.076447
0.159760 0.197939
C2
Cn
0.029002 3.448038
0.1
1
10
Figure 18. IGBT Transient Thermal Impedance
10
1 50% Duty Cycle
20%
10%
0.1 5%
2%
0.01 1%
Single Pulse
0.001
0.000001 0.00001
RqJC = 1.5
Junction R1 R2
Rn Case
Ci = ti/Ri
C1 C2
Cn
Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.0001
0.001
0.01
0.1
1
10
PULSE TIME (sec)
Figure 19. Diode Transient Thermal Impedance
Ri (°C/W)
0.19655
0.414
0.5
0.345
0.0934
ti (sec)
1.48E−4
0.002
0.03
0.1
2.0
100
1000
Figure 20. Test Circuit for Switching Characteristics
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