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MKT1817447256G 查看數據表(PDF) - Vishay Semiconductors

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MKT1817447256G Datasheet PDF : 14 Pages
First Prev 11 12 13 14
Not for New Designs - Alternative Device: MKT370
www.vishay.com
MKT1817
Vishay Roederstein
GROUP C INSPECTION REQUIREMENTS
SUB-CLAUSE NUMBER AND TEST
CONDITIONS
SUB-GROUP C1B OTHER PART OF
SAMPLE OF SUB-GROUP C1
4.7.2 Final inspection
Visual examination
PERFORMANCE REQUIREMENTS
No visible damage
4.9
Shock
Mounting:
see section “Mounting” of this specification
Pulse shape: half sine
Acceleration: 490 m/s2
Duration of pulse: 11 ms
4.9.3 Final measurements
Visual examination
No visible damage
Capacitance
|C/C| 3 % of the value measured in 4.6.1
Tangent of loss angle
Increase of tan :
0.010 for: C 220 nF or
0.015 for: 220 nF < C 470 nF or
0.003 for: C > 470 nF
Compared to values measured in 4.6.1
SUB-GROUP C1 COMBINED SAMPLE
OF SPECIMENS OF SUB-GROUPS
C1A AND C1B
4.10 Climatic sequence
Insulation resistance
As specified in section “Specific Reference
Data 370” of this specification
4.10.2 Dry heat
Temperature:
+100 °C for rated voltage 63 V
+105 °C for rated voltage > 63 V
Duration: 16 h
4.10.3 Damp heat cyclic
Test Db, first cycle
4.10.4 Cold
Temperature: -55 °C
Duration: 2 h
4.10.6 Damp heat cyclic
Test Db, remaining cycles
Voltage proof = URDC for 1 min within 15 min No breakdown or flash-over
after removal from testchamber
4.10.6.2 Final measurements
Visual examination
No visible damage
Legible marking
Capacitance
|C/C| 3 % of the value measured in
4.4.2 or 4.9.3
Tangent of loss angle
Increase of tan :
0.010 for: C 220 nF or
0.015 for: 220 nF < C 470 nF or
0.005 for: C > 470 nF
Compared to values measured in 4.3.1
or 4.6.1
Insulation resistance
50 % of values specified in section
“Specific Reference Data 370” of this
specification
Revision: 11-Jan-18
11
Document Number: 26032
For technical questions, contact: dc-film@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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