VS-1N3881(2015) 查看數據表（PDF） - Vishay Semiconductors
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VS-1N3881 Datasheet PDF : 9 Pages
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www.vishay.com
VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
Fast Recovery Diodes (Stud Version), 6 A, 12 A
DO-203AA (DO-4)
PRODUCT SUMMARY
IF(AV)
Package
Circuit configuration
6 A, 12 A
DO-203AA (DO-4)
Single diode
FEATURES
• Short reverse recovery time
• Low stored charge
• Wide current range
• Excellent surge capabilities
• Standard JEDEC® types
• Stud cathode and stud anode versions
• Fully characterized reverse recovery conditions
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC power supplies
• Inverters
• Converters
• Choppers
• Ultrasonic systems
• Freewheeling diodes
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
TEST CONDITIONS
1N3879(R) TO 1N3883(R)
1N3889(R) TO 1N3893(R)
6 (1)
IF(AV)
TC maximum
100
12 (1)
100
IF(RMS)
IFSM
50 Hz
60 Hz
9.5
72
75 (1)
19
145
150 (1)
50 Hz
I2t
60 Hz
26
103
23
94
I2t
363
856
VRRM
Range
50 to 400 (1)
50 to 400 (1)
trr
See Recovery Characteristics table See Recovery Characteristics table
TJ
Range
-65 to +150
-65 to +150
Note
(1) JEDEC® registered values
UNITS
A
°C
A
A
A2s
I2s
V
ns
°C
Revision: 28-May-15
1
Document Number: 93144
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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