DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

VS-1N3881(2015) 查看數據表(PDF) - Vishay Semiconductors

零件编号
产品描述 (功能)
生产厂家
VS-1N3881
(Rev.:2015)
Vishay
Vishay Semiconductors Vishay
VS-1N3881 Datasheet PDF : 9 Pages
1 2 3 4 5 6 7 8 9
www.vishay.com
VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
160
150
140
130
DC
120
110
100
90 180 °C
80
120 °C
60 °C
70
180 °C
60
0 1 2 3 4 5 6 7 8 9 10
Average Forward Current (A)
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature, 1N3879 Series
160
150
140
130
DC
120
110
100
90 180 °C
80
120 °C
60 °C
70
180 °C
60
0 2 4 6 8 10 12 14 16 18 20
Average Forward Current (A)
Fig. 2 - Average Forward Current vs.
Maximum Allowable Case Temperature, 1N3889 Series
I
t
IF
IFM
%IRM(REC)
IRM(REC)
dIF
dt
trr
Qrr
IF, IFM - Peak forward current prior to commutation
-dIF/dt - Rate of fall of forward current
IRM(REC) - Peak reverse recovery current
trr - Reverse recovery time
Qrr - Reverse recovered charge
Fig. 3 - Reverse Recovery Time Test Waveform
10
1N3879 to 1N3883
9 TJ = 150 °C
8
Ø = 180°
7
120°
6
60°
30°
5
RMS limit
4
3
12 - ΔR
15 - ΔR
R
thSA
=
10
8
-
- ΔR 7 -
ΔR K/W
6
ΔR
-
ΔR
20 - ΔR
30 - ΔR
2
Ø
No heatsink
1
Conduction angle
0
0
1
2
3
4
5
6 10 20 30 40 50 60 70 80 90 100
Average Forward Current (A)
Maximum Allowable
Ambient Temperature (°C)
Fig. 4 - Current Rating Nomogram (Sinusoidal Waveforms), 1N3879 Series
180° 0.58
120° 0.60
60° 1.28
30° 2.20
Revision: 28-May-15
4
Document Number: 93144
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]