1N3879 查看數據表（PDF） - Vishay Semiconductors
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1N3879 Datasheet PDF : 8 Pages
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VS-1N3879(R), VS-1N3889(R) Series
Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
TJ
TStg
RthJC
RthCS
DC operation
Mounting surface, smooth,
flat and greased
Allowable mounting torque
Not lubricated threads
Lubricated threads
Approximate weight
Case style
JEDEC®
1N3879(R)
TO 1N3883(R)
1N3889(R)
TO 1N3893(R)
-65 to +150
-65 to +175
2.5
2.0
0.5
1.5 + 0 - 10 %
(13)
1.2 + 0 - 10 %
(10)
7
0.25
DO-4 (DO-203AA)
UNITS
°C
°C/W
N·m
(lbf · in)
g
oz.
RthJC CONDUCTION
CONDUCTION ANGLE
1N3879(R)
TO 1N3883(R)
1N3889(R)
TO 1N3893(R)
SINUSOIDAL CONDUCTION
1N3879(R)
TO 1N3883(R)
1N3889(R)
TO 1N3893(R)
RECTANGULAR CONDUCTION
TEST CONDITIONS
UNITS
180°
0.58
0.46
0.33
0.26
120°
60°
0.60
0.48
0.58
0.46
1.28
1.02
1.28
1.02
TJ = 150 °C
K/W
30°
2.20
1.76
2.20
1.76
Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
160
150
140
130
DC
120
110
100
90 180 °C
80
120 °C
60 °C
70
180 °C
60
0 1 2 3 4 5 6 7 8 9 10
Average Forward Current (A)
Fig. 1 - Average Forward Current vs.
Maximum Allowable Case Temperature, 1N3879 Series
160
150
140
130
DC
120
110
100
90 180 °C
80
120 °C
60 °C
70
180 °C
60
0 2 4 6 8 10 12 14 16 18 20
Average Forward Current (A)
Fig. 2 - Average Forward Current vs.
Maximum Allowable Case Temperature, 1N3889 Series
Revision: 11-Jan-18
3
Document Number: 93144
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