STL31N65M5 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STL31N65M5

N-channel 650 V, 0.135 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL31N65M5

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

VDS Drain-source voltage

VGS

ID (1)

ID (1)

IDM (1),(2)

ID(3)

ID(3)

PTOT (3)

PTOT (1)

Gate-source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Drain current (continuous) at Tamb = 25 °C

Drain current (continuous) at Tamb = 100 °C

Total dissipation at Tamb = 25 °C

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

dv/dt (4)

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

Peak diode recovery voltage slope

Tstg Storage temperature

Tj Max. operating junction temperature

1. The value is rated according to Rthj-case and limited by package.

2. Pulse width limited by safe operating area.

3. When mounted on FR-4 board of inch², 2oz Cu.

4. ISD ≤ 15 A, di/dt ≤ 400 A/µs, VDD = 400 V, VDS(peak) < V(BR)DSS.

650

± 25

15

12

60

2.8

1.8

2.8

125

5

410

15

- 55 to 150

150

Symbol

Table 3. Thermal data

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb(1) Thermal resistance junction-ambient max

1. When mounted on FR-4 board of inch², 2oz Cu.

Value

1

45

Unit

V

V

A

A

A

A

A

W

W

A

mJ

V/ns

°C

°C

Unit

°C/W

°C/W

DocID025459 Rev 1

3/17

17

Share Link: