1PS10SB82,315 查看數據表（PDF） - NXP Semiconductors.

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1PS10SB82,315

Schottky barrier diode

NXP Semiconductors. 

NXP Semiconductors

Schottky barrier diode

Product data sheet

1PS10SB82

FEATURES

• Low forward voltage

• Low diode capacitance

• Leadless ultra small plastic package

(1.0 mm × 0.6 mm × 0.5 mm)

• Boardspace 1.17 mm2 (approx. 10% of SOT23)

• Power dissipation comparable to SOT23.

DESCRIPTION

An epitaxial Schottky barrier diode encapsulated in a

SOD882 leadless ultra small plastic package.

ESD sensitive device, observe handling precautions.

handbook, halfpage

APPLICATIONS

• UHF mixers

• Sampling circuits

• Modulators

• Phase detectors

• Mobile communication, digital (still) cameras, PDA’s and

PCMCIA cards.

Bottom view

MDB391

Marking code: S5.

The marking bar indicates the cathode.

Fig.1 Simplified outline (SOD882), pin

configuration and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

VR

IF

Tstg

Tj

PARAMETER

continuous reverse voltage

continuous forward current

storage temperature

junction temperature

MIN.

−

−

−65

−

MAX.

15

30

+150

150

UNIT

V

mA

°C

°C

2003 Aug 20

2

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