NXP Semiconductors
Schottky barrier diode
Product data sheet
1PS10SB82
FEATURES
• Low forward voltage
• Low diode capacitance
• Leadless ultra small plastic package
(1.0 mm × 0.6 mm × 0.5 mm)
• Boardspace 1.17 mm2 (approx. 10% of SOT23)
• Power dissipation comparable to SOT23.
DESCRIPTION
An epitaxial Schottky barrier diode encapsulated in a
SOD882 leadless ultra small plastic package.
ESD sensitive device, observe handling precautions.
handbook, halfpage
APPLICATIONS
• UHF mixers
• Sampling circuits
• Modulators
• Phase detectors
• Mobile communication, digital (still) cameras, PDA’s and
PCMCIA cards.
Bottom view
MDB391
Marking code: S5.
The marking bar indicates the cathode.
Fig.1 Simplified outline (SOD882), pin
configuration and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VR
IF
Tstg
Tj
PARAMETER
continuous reverse voltage
continuous forward current
storage temperature
junction temperature
MIN.
−
−
−65
−
MAX.
15
30
+150
150
UNIT
V
mA
°C
°C
2003 Aug 20
2