1PS10SB82T/R 查看數據表（PDF） - NXP Semiconductors.
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1PS10SB82T/R Datasheet PDF : 8 Pages
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NXP Semiconductors
Schottky barrier diode
Product data sheet
1PS10SB82
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
TYP.
VF
forward voltage
see Fig.2
IF = 1 mA
−
IF = 30 mA
−
rD
differential diode forward resistance f = 1 MHz; IF = 5 mA; see Fig.5 12
IR
continuous reverse current
VR = 1 V; see Fig.3; note 1
−
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.4 1
Note
1. Pulse test: tp = 300 μs; δ = 0.02.
MAX.
340
700
−
0.2
−
UNIT
mV
mV
Ω
μA
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
Rth j-a
thermal resistance from junction to ambient
note 1
500
Note
1. Refer to SOD882 standard mounting conditions (footprint), FR4 with 60 μm copper strip line.
Soldering
Reflow soldering is the only recommended soldering method.
UNIT
K/W
2003 Aug 20
3
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