1PS10SB82T/R 查看數據表（PDF） - NXP Semiconductors.
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1PS10SB82T/R Datasheet PDF : 8 Pages
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NXP Semiconductors
Schottky barrier diode
GRAPHICAL DATA
103
handbook, halfpage
IF
(mA)
102
MLE112
(2)
(1)
(3)
10
(1)
(2)
(3)
1
0
0.4
0.8
1.2
1.6
VF (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Product data sheet
1PS10SB82
103
handbook, halfpage
IR
(μA)
102
(1)
10
(2)
1
10−1
(3)
MLE113
10−2
0
5
10
15
VR (V)
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
handbook1, .h2alfpage
Cd
(pF)
1
MLE114
0.8
0.6
0.4
0
2
4
6
8
10
VR (V)
103
handbook, halfpage
rD
(Ω)
102
MLE115
10
1
10−1
1
10
102
IF (mA)
f = 1 MHz; Tamb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
Fig.5 Differential diode forward resistance as a
function of forward current; typical values.
2003 Aug 20
4
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