1PS79SB30 查看數據表（PDF） - NXP Semiconductors.
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1PS79SB30 Datasheet PDF : 9 Pages
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NXP Semiconductors
1PS79SB30
Schottky barrier single diode
7. Characteristics
Table 7.
Symbol
VF
Characteristics
Parameter
forward voltage
IR
Cd
103
IF
(mA)
102
reverse current
diode capacitance
Conditions
IF = 0.1 mA; Tamb = 25 °C
IF = 1 mA; Tamb = 25 °C
IF = 10 mA; Tamb = 25 °C
IF = 100 mA; Tamb = 25 °C
IF = 200 mA; Tamb = 25 °C
VR = 25 V; Tamb = 25 °C; pulsed;
tp = 300 µs; δ = 0.02
f = 1 MHz; Tamb = 25 °C; VR = 1 V
mld546
103
IR
(µA)
102
10
10
Min Typ Max Unit
-
190 220 mV
-
250 290 mV
-
320 360 mV
-
440 500 mV
-
520 600 mV
-
-
0.5 µA
-
(1)
-
20
pF
mld547
(2)
(1)
1
(2) (3)
10- 1
0
0.4
0.8
1.2
VF (V)
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Fig. 1. Forward current as a function of forward
voltage; typical values
1
(3)
10- 1
0
10
20
30 VR (V) 40
Fig. 2.
(1) Tamb = 125 °C
(2) Tamb = 85 °C
(3) Tamb = 25 °C
Reverse current as a function of reverse
voltage; typical values
1PS79SB30
Product data sheet
All information provided in this document is subject to legal disclaimers.
24 July 2012
© NXP B.V. 2012. All rights reserved
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