NTE2102 查看數據表（PDF） - NTE Electronics

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NTE2102

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

NTE Electronics 

NTE2102

Integrated Circuit

NMOS, 1K Static RAM (SRAM), 350ns

Description:

The NTE2101 is a high–speed 1024 x 1 bit static random access read/write memory in a 16–Lead

DIP type package designed using N–Channel depletion mode silicon gate technology. Static storage

cells eliminate the need for clock or refresh circuitry.

Low threshold silicon gate N–Channel technology allows complete DTL/TTL compatibility of all inputs

and outputs as well as a single 5V supply. The separate chip enable input (CE) controlling the output

allows easy memory expansion by OR–tying individual devices to a data bus. Data in and data out

have the same polarity.

Features:

D Single 5V Supply

D All Inputs and Outputs Directly DTL/TTL Compatible

D Static Operation – No Clocks or Refresh

D All Inputs Protected Against Static Charge

D 350ns Access Time

Absolute Maximum Ratings: (Note 1)

Voltage at Any Pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5V to +7V

Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1W

Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C

Lead Temperature (During Soldering, 10sec), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C

Note 1. “Absolute Maximum Ratings” are those values beyond which the device may be permanently

damaged. They do not mean the device may be operated at these values.

Recommended Operating Conditions:

Parameter

Symbol

Supply Voltage

VCC

Operating Ambient Temperature

TA

Input Low Voltage

VIL

Input High Voltage

VIH

Test Conditions

Min Typ Max Unit

4.75 – 5.25 V

0 – +70 °C

–0.5 – 0.8 V

2.0 – VCC V

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