NTE2102 查看數據表（PDF） - NTE Electronics

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NTE2102

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

NTE Electronics 

DC Electrical Characteristics: (TA = 0° to +70°C, VCC = 5V ±5% unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Input Load Current

ILI VIN = 0 to 5.25V

– – 10 µA

Output Leakage Current, High ILOH CE = 2V, VOUT = 2.4V

– – 5 µA

Output Leakage Current, Low ILOL CE = 2V, VOUT = 0.4V

– – –10 µA

Power Supply Current

ICC All Inputs = 5.25V, Data Output Open,

TA = +25°C

– – 45 mA

Power Supply Amp

ICC All Inputs = 5.25V, Data Output Open,

TA = 0°C

– – 50 mA

Output Low Voltage

VOL IOL = 3.2mA

– – 0.4 V

Output High Voltage

VOH IOH = –200µA

2.4 – – V

AC Electrical Characteristics (With Standard Load): (TA = 0° to +70°C, VCC = 5V ±5% unless

otherwise specified)

Parameter

Symbol Test Conditions Min Typ Max Unit

Read Cycle

Read Cycle

Access Time

Chip Enable to Output Time

tRC

350 –

– ns

tA

–

– 350 ns

tCO

–

– 150 ns

Previous Read Data Valid with Respect to Address

tOH1

Previous Read Data Valid with Respect to Chip Enable tOH2

Write Cycle

40 –

0

–

– ns

– ns

Write Cycle

tWC

350 –

– ns

Address to Write Set–Up

tAW

20 –

– ns

Write Pulse Width

Write Recovery Time

Data Set–Up Time

tWP

150 –

– ns

tWR

0

–

– ns

tDW

125 –

– ns

Data Hold Time

tDH

0

–

– ns

Chip Enable to Write Set–Up

tCW

150 –

– ns

AC Electrical Characteristis: (TA = +25°C, f = 1MHz unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Capacitance

Input Capacitance

Output Capacitance

CIN

COUT

All Inputs VIN = 0V

VO = 0V

–

3

5 pF

–

4

6 pF

Standby Characteristics: (TA = 0° to +70°C, Note 2 unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

VCC in Standby

CE Bias in Standby

VPD

VCES

2 ≤ VPD ≤ VCCmax

1.5 ≤ VPD ≤ 2

1.5 –

–

V

2.0 –

–

V

VPD –

–

V

Note 2. Typical values at TA = +25°C.

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