NTE2102 查看數據表（PDF） - NTE Electronics

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NTE2102

Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns

NTE Electronics 

Standby Characteristics (Cont’d): (TA = 0° to +70°C, Note 2 unless otherwise specified)

Parameter

Symbol

Test Conditions

Min Typ Max Unit

Standby Current

IPD All Inputs = VPD = 1.5V

–

– 28 mA

All Inputs = VPD = 2V

–

– 38 mA

Chip Deselect to Standby Time

Recovery Time

tCP

tR Note 3

0

–

tRC

–

– ns

– ns

Note 2. Typical values at TA = +25°C.

Note 3. tR = tRC = Read Cycle Time.

Pin Connection Diagram

A6 1

A5 2

R/W 3

A1 4

A2 5

A3 6

A4 7

A0 8

16 A7

15 A8

14 A9

13 CE

12 Data Out

11 Data In

10 VCC

9 GND

16

9

1

8

.870 (22.0) Max

.260 (6.6)

Max

.200 (5.08)

Max

.100 (2.54)

.700 (17.78)

.099 (2.5) Min

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