NTE2764 查看數據表（PDF） - NTE Electronics
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NTE2764 Datasheet PDF : 5 Pages
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DC Electrical Characteristics: (VCC = +5V ±5% unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ
Read Mode and Standby Mode (TA = 0° to +70°C)
Output High Voltage
VOH IOH = –400µA
Output Low Voltage
VOL IOL = 2.1mA
Input High Voltage
VIH
2.4 –
–
–
2.0 –
Input Low Voltage
VIL
–0.1 –
Output Leakage Current
ILO VOUT = 5.25V
–
–
Input Leakage Current
VCC Current
Standby
ILI VIN = 5.25V
ICC1 CE = VIH
–
–
–
–
Active
ICC2 OE = CE = VIL
–
–
Program, Program Verify, and Program Inhibit Mode (TA = +25° ±5°C, VPP = +21V ±0.5V)
Input High Voltage
VIH
2.0 –
Input Low Voltage
VIL
–0.1 –
Input Leakage Current
Output High Voltage
ILI
VOH
VIN = VIL or VIN
IOH = –400µA
–
–
2.4 –
Output Low Voltage
VCC Current
VPP Current
VOL IOL = 2.1mA
ICC
IPP CE = VIL, PGM = VIL
–
–
–
–
–
–
Max Unit
–
V
0.45 V
VCC +1 V
+0.8 V
10 µA
10 µA
50 mA
150 mA
VCC +1 V
+0.8 V
10 µA
–
V
0.45 V
150 mA
30 mA
AC Electrical Characteristics: (VCC = +5V ±5% unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Read Mode and Standby Mode (TA = 0° to +70°C, Note 2)
Address to Output Delay
tACC CE = OE = VIL
–
– 250 ns
CE to Output Delay
tCE OE = VIL
–
– 250 ns
Output Enable to Output Delay
tOE CE = VIL
10 – 100 ns
Output Enable High to Output Float
tDF CE = VIL
0
– 90 ns
Address to Output Hold
tOH CE = OE = VIL
Read Mode and Standby Mode (TA = +25°C ±5°C, VPP = +21V ±5V, Note 3)
Address Setup Time
tAS
0
–
– ns
2
–
– µs
OE Setup Time
tOES
2
–
– µs
Note 2. Test Conditions:
Output Load: 1 TTL gate and CL = 100pF
Input Rise and fall Times: 20ns
Input Pulse Levels: 0.8V to 2.2V
Timing Measurement Reference Level:
Inputs: 1.0V and 2.0V
Outputs: 0.8V and 2.0V
Note 3. Test Conditions:
Input Pulse Levels: 0.8V to 2.2V
Input Timing Reference Level: 1.0V and 2.0V
Output Timing Reference Level: 0.8V and 2.0V
Input Rise and fall Times: 20ns
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