T410H-6T 查看數據表（PDF） - STMicroelectronics
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T410H-6T Datasheet PDF : 9 Pages
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Characteristics
T410H
Figure 5.
Relative variation of gate trigger Figure 6.
current and voltage versus junction
temperature (typical values)
Relative variation of holding and
latching current versus junction
temperature (typical values)
IGT, VGT[Tj] / IGT, VGT[Tj=25 °C]
3.0
IGT Q3
2.5
IGT Q1-Q2
2.0
1.5
1.0
VGT Q1-Q2-Q3
0.5
0.0
-50
-25
0
Tj(°C)
25
50
75
100
125
150
IH, IL [Tj] / IH, IL [Tj=25 °C]
2.0
1.5
IL
IH
1.0
0.5
Tj(°C)
0.0
-50
-25
0
25
50
75
100
125
150
Figure 7. Surge peak on-state current
versus number of cycles
ITSM(A)
45
40
35
30
25
20
15
10
Repetitive
5 TC=141 °C
0
1
Non repetitive
Tj initial=25°C
t=20ms
One cycle
Number of cycles
10
100
1000
Figure 8.
Non-repetitive surge peak on-state
current and corresponding value
of I2t
ITSM(A), I²t (A²s)
1000
dI/dt limitation: 50 A/µs
Tj initial=25 °C
ITSM
100
10
Sinusoidal pulse width tp < 10 ms
1
0.01
0.10
I²t
tP(ms)
1.00
10.00
Figure 9. On-state characteristics
(maximum values)
ITM (A)
100
Tj max
Vto = 0.80 V
Rd = 80 mΩ
10
Tj=150 °C
Tj=25 °C
VTM (V)
1
0
1
2
3
4
Figure 10. Relative variation of critical rate of
decrease of main current versus
junction temperature
(dI/dt)C [Tj] / (dI/dt)c [Tj=150 °C]
11
10
9
8
7
6
5
4
3
2
1
Tj(°C)
0
5
25
50
75
100
125
150
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Doc ID 15712 Rev 1
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