T410H-6T 查看數據表（PDF） - STMicroelectronics
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T410H-6T Datasheet PDF : 9 Pages
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T410H
Characteristics
Figure 11. Relative variation of critical rate of Figure 12. Relative variation of static dV/dt
decrease of main current versus
immunity versus junction
reapplied dV/dt (typical values)
temperature
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
4
3
2
1
0
0.1
(dV/dt)C (V/µs)
1.0
10.0
100.0
dV/dt [Tj] / dV/dt [T j=150 °C]
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
Tj(°C)
0
25
50
75
100
VD=VR=400 V
125
150
Figure 13. Variation of leakage current versus Figure 14. Acceptable case to ambient thermal
junction temperature for different
resistance versus repetitive peak
values of blocking voltage
off-state voltage
IDRM/IRRM [Tj;V DRM/VRRM]/IDRM/IRRM [Tj=150°C; 600V]
1.0E+00
VDRM=VRRM=600 V
1.0E-01
VDRM=VRRM=400 V
1.0E-02
VDRM=VRRM=200 V
1.0E-03
Tj(°C)
1.0E-04
25
50
75
100
125
150
Rth(c-a) (°C/W)
80
70
60
50
40
30
20
10
0
200
300
VAC PEAK(V)
400
Rth(j-c)=2.2 °C/W
TJ=150 °C
500
600
Doc ID 15712 Rev 1
5/9
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