DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

M27C2001-10B1 查看數據表(PDF) - STMicroelectronics

零件编号
产品描述 (功能)
生产厂家
M27C2001-10B1
ST-Microelectronics
STMicroelectronics ST-Microelectronics
M27C2001-10B1 Datasheet PDF : 16 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
M27C2001
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA
Ambient Operating Temperature (3)
–40 to 125
°C
TBIAS
Temperature Under Bias
–50 to 125
°C
TSTG
Storage Temperature
–65 to 150
°C
VIO (2)
Input or Output Voltage (except A9)
–2 to 7
V
VCC
Supply Voltage
–2 to 7
V
VA9 (2)
A9 Voltage
–2 to 13.5
V
VPP
Program Supply Voltage
–2 to 14
V
Note: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents.
2. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns.
3. Depends on range.
Table 3. Operating Modes
Mode
E
Read
VIL
Output Disable
VIL
Program
VIL
Verify
VIL
Program Inhibit
VIH
Standby
VIH
Electronic Signature
VIL
Note: X = VIH or VIL, VID = 12V ± 0.5V.
G
P
A9
VPP
Q0-Q7
VIL
X
X
VCC or VSS Data Out
VIH
X
X
VCC or VSS
Hi-Z
VIH
VIL Pulse
X
VPP
Data In
VIL
VIH
X
VPP
Data Out
X
X
X
VPP
Hi-Z
X
X
X
VCC or VSS
Hi-Z
VIL
VIH
VID
VCC
Codes
Table 4. Electronic Signature
Ide ntifie r
A0
Q7
Q6
Q5
Q4
Q3
Q2
Q1
Q0 Hex Data
Manufacturer’s Code
VIL
0
0
1
0
0
0
0
0
20h
Device Code
VIH
0
1
1
0
0
0
0
1
61h
Two Line Output Control
Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while G should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
3/16

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]