B500C1500(2014) 查看數據表（PDF） - Vishay Semiconductors
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B500C1500 Datasheet PDF : 5 Pages
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www.vishay.com
VS-2KBB Series
Vishay Semiconductors
FORWARD CONDUCTION
PARAMETER
Maximum DC output current
Maximum peak one cycle,
non-repetitive surge current
SYMBOL
IO
IFSM
Maximum I2t for fusing,
initial TJ = TJ maximum
I2t
Maximum I2√t capability for fusing
Maximum peak forward voltage per diode
Operating frequency range
Note
(1) I2t for time tx = I2√t x √tx
I2√t (1)
VFM
f
TEST CONDITIONS
TC = 45 °C, resistive and inductive load
TC = 45 °C, capacitive load
t = 6 ms
t = 5 ms
Following any rated load
condition, and with rated VRRM
applied following surge
t = 10 ms
t = 8.3 ms
t = 10 ms
Rated VRRM applied following
surge, initial
TJ = 150 °C
t = 8.3 ms
t = 0.1 to 10 ms, VRRM following surge = 0
IO = 1.9 A (3.0 Apk)
VALUES
1.9
1.5
50
52
12.5
11.3
17.7
16.1
177
1.1
40 to 2000
UNITS
A
A
A2s
A2√s
V
Hz
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Operating junction and storage temperature range
TJ, TStg
Approximate weight
VALUES
-40 to 150
4
0.14
UNITS
°C
g
oz.
2.0
1.8
Resistive, inductive load
1.6
1.4
1.2
1.0
Capacitive load
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Maximum Allowable Ambient Temperature (°C)
Fig. 1 - Average (DC) Output Current vs.
Maximum Allowable Ambient Temperature
60
50
40
30
20
10
0
10-2
10-1
1
10
Equal Amplitude Pulse Train Duration (s)
Fig. 2 - Maximum Non-Repetitive Surge Current vs.
Pulse Train Duration (f = 50 Hz)
Revision: 26-Aug-14
2
Document Number: 93561
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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