IXGH32N170 查看數據表（PDF） - IXYS CORPORATION
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IXGH32N170 Datasheet PDF : 5 Pages
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IXGH 32N170
IXGT 32N170
Fig. 7. Transconductance
45
40
35 TJ = -40ºC
25ºC
30
125ºC
25
20
15
10
5
0
0
16
32
48
64
80
96
I C - Amperes
Fig. 9. Dependence of Eoff on Ic
22
RG = 3Ω
20 RG= 15Ω - - - - -
18 VGE = 15V
VCE = 1020V
TJ = 125ºC
16
14
12
TJ = 25ºC
10
8
16
24
32
40
48
56
64
I C - Amperes
Fig. 11. Gate Charge
15
VCE = 850V
IC = 32A
12 IG= 10mA
9
6
3
Fig. 8. Dependence of Eoff on RG
25
TJ = 125ºC
23 VGE = 15V
VCE = 1020V
21
IC = 64A
19
17
15
IC = 32A
13
11
0
IC = 16A
10
20
30
40
50
R G - Ohms
Fig. 10. Dependence of Eoff on
Tem perature
22
RG = 3Ω
20 RG = 15Ω - - - - -
VGE = 15V
18
VCE = 1020V
IC = 64A
16
14
IC = 32A
12
10
IC = 16A
8
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
10000
Fig. 12. Capacitance
f = 1 MHz
1000
Cies
Coes
100
Cres
0
0
30
60
90
120
150
Q G - nanoCoulombs
10
0
5 10 15 20 25 30 35 40
VC E - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
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