PN3638A_D74Z 查看數據表（PDF） - Fairchild Semiconductor
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PN3638A_D74Z Datasheet PDF : 7 Pages
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Electrical Characteristics
Symbol
Parameter
PNP General Purpose Amplifier
(continued)
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 10 mA, IB = 0
25
Voltage*
V(BR)CES
Collector-Emitter Breakdown
IC = 100 µA, IB = 0
25
Voltage*
V(BR)CBO
Collector-Base Breakdown Voltage IC = 10 µA, IE = 0
25
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
4.0
ICES
Collector-Cutoff Current
VCE = 15 V, IE = 0
VCE = 15 V, IE = 0, TA = 65°C
ON CHARACTERISTICS*
hFE
VCE(sat)
VBE(sat)
DC Current Gain
VCE = 1.0 V, IC = 50 mA
PN3638
30
PN3638A
100
VCE = 2.0 V, IC = 300 mA
PN3638
30
PN3638A
20
VCE = 10 V, IC = 100 mA
PN3638
20
PN3638A
80
VCE = 10 V, IC = 1.0 mA
PN3638A
100
Collector-Emitter Saturation Voltage IC = 50 mA, IB = 2.5 mA
IC = 300 mA, IB = 30 mA
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 2.5 mA
IC = 300 mA, IB = 30 mA
0.8
SMALL SIGNAL CHARACTERISTICS
Cob
Output Capacitance
Cib
Input Capacitance
hfe
Small-Signal Current Gain
hie
Input Impedance
hoe
Output Admittance
hre
Voltage Feedback Ratio
VCB = 10 V, f = 1.0 MHz
PN3638
PN3638A
VBE = 0.5 V, f = 1.0 MHz
PN3638
PN3638A
IC = 50 mA, VCE = 3.0 V,
f = 100 MHz
PN3638
1.0
PN3638A
1.5
IC = 10 mA, VCE = 10 V,
f = 1.0 kHz
PN3638
25
PN3638A
100
IC = 10 mA, VCE = 10 V,
f = 1.0 kHz
PN3638
PN3638A
SWITCHING CHARACTERISTICS
ton
Turn-on Time
td
Delay Time
tr
Rise Time
toff
Turn-off Time
ts
Storage Time
tf
Fall Time
VCC = 10 V, IC = 300 mA,
75
IB1 = 30 mA
20
70
VCC = 10 V, IC = 300 mA
170
IB1 = I B2 = 30 mA
140
70
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V
V
V
V
35
nA
2.0
µA
0.25
V
1.0
V
1.1
V
2.0
V
20
pF
10
pF
65
pF
25
pF
2.0
kΩ
1.2
µmhos
26
x10-4
15
x10-4
ns
ns
ns
ns
ns
ns
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