2N5961_D74Z 查看數據表（PDF） - Fairchild Semiconductor
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2N5961_D74Z Datasheet PDF : 7 Pages
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NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage* IC = 5.0 mA, IB = 0
60
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 10 µA, IE = 0
60
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
8.0
V
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCB = 45 V, IE = 0
VCB = 45 V, IE = 0, TA = 65 °C
VEB = 5.0 V, IC = 0
2.0
nA
50
nA
1.0
nA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE(sat)
VBE(on)
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
VCE = 5.0 V, IC = 10 µA
VCE = 5.0 V, IC = 100 µA
VCE = 5.0 V, IC = 1.0 mA
VCE = 5.0 V, IC = 10 mA
IC = 10 mA, IB = 0.5 mA
IC = 10 mA, IB =1.0 mA
VCE = 5.0 V, IC = 1.0 mA
100
120
135
150
700
0.2
V
0.2
V
0.5
0.7
V
SMALL SIGNAL CHARACTERISTICS
Ccb
Collector-Base Capacitance
Ceb
Emitter-Base Capacitance
hfe
Small-Signal Current Gain
NF
Noise Figure
VCB = 5.0 V, f = 1.0 MHz
4.0
pF
VEB = 0.5 V, f = 1.0 MHz
6.0
pF
IC = 10 mA, VCE = 5.0 V,
f = 1.0 kHz
150
1000
IC = 10 mA, VCE = 5.0 V,
f = 100 MHz
1.0
VCE = 5.0 V, IC = 10 µA,
RS = 10 kΩ, f = 1.0 kHz,
BW = 400 Hz
3.0
dB
VCE = 5.0 V, IC = 10 µA,
RS = 10 kΩ, f = 10 Hz - 10 kHz
BW = 15.7 kHz
3.0
dB
VCE = 5.0 V, IC = 100 µA,
RS = 1.0 kΩ, f = 1.0 kHz
BW = 400 Hz
6.0
dB
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
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