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2N6071AG(2006) 查看數據表(PDF) - ON Semiconductor

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产品描述 (功能)
生产厂家
2N6071AG
(Rev.:2006)
ON-Semiconductor
ON Semiconductor ON-Semiconductor
2N6071AG Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
2N6071A/B Series
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 110°C
ON CHARACTERISTICS
*Peak On-State Voltage (Note 3) (ITM = "6.0 A Peak)
*Gate Trigger Voltage (Continuous DC), All Quadrants
(Main Terminal Voltage = 12 Vdc, RL = 100 W, TJ = −40°C)
Gate Non−Trigger Voltage, All Quadrants
(Main Terminal Voltage = 12 Vdc, RL = 100 W, TJ = 110°C)
*Holding Current
(Main Terminal Voltage = 12 Vdc, Gate Open, Initiating Current = "1 Adc)
TJ = −40°C
TJ = 25°C
Turn-On Time (ITM = 14 Adc, IGT = 100 mAdc)
IDRM,
IRRM
VTM
VGT
VGD
IH
tgt
10
mA
2
mA
2
V
V
1.4 2.5
V
0.2
mA
30
15
1.5
ms
QUADRANT
(Maximum Value)
Type
IGT @ TJ
I
II
III
IV
mA mA mA mA
Gate Trigger Current (Continuous DC)
(Main Terminal Voltage = 12 Vdc, RL = 100 W)
2N6071A
2N6073A
2N6075A
+25°C
−40°C
5
5
5
10
20
20
20
30
2N6071B
2N6073B
2N6075B
+25°C
−40°C
3
3
3
5
15
15
15
20
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage
@ VDRM, TJ = 85°C, Gate Open, ITM = 5.7 A, Exponential Waveform,
Commutating di/dt = 2.0 A/ms
3. Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%.
*Indicates JEDEC Registered Data.
dv/dt(c)
5
− V/ms
SAMPLE APPLICATION:
TTL-SENSITIVE GATE 4 AMPERE TRIAC
TRIGGERS IN MODES II AND III
14
0V
MC7400
LOAD
4
510
2N6071A
−VEE
7
VEE = 5.0 V
W
115 VAC
60 Hz
+
Trigger devices are recommended for gating on Triacs. They provide:
1. Consistent predictable turn-on points.
2. Simplified circuitry.
3. Fast turn-on time for cooler, more efficient and reliable operation.
http://onsemi.com
3

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