22N65M5(2013) 查看數據表（PDF） - STMicroelectronics

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22N65M5
(Rev.:2013)

N-channel 650 V, 0.180 Ω typ., 15 A MDmesh™ V Power MOSFET in a PowerFLAT™ 8x8 HV package

STMicroelectronics 

STL22N65M5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

td(v)

tr(v)

tf(i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

Test conditions

VDD = 400 V, ID = 12 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 20)

Min. Typ. Max. Unit

43

ns

7.5

ns

-

-

7.5

ns

11.5

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

ISD(1) Source-drain current

ISDM (1),(2) Source-drain current (pulsed)

VSD (3) Forward on voltage

ISD = 15 A, VGS = 0

15 A

-

60 A

-

1.5 V

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

272

ISD = 15 A, di/dt = 100 A/µs

-

3.4

VDD = 100 V (see Figure 17)

25

ns

µC

A

trr

Reverse recovery time

ISD = 15 A, di/dt = 100 A/µs

336

ns

Qrr Reverse recovery charge

VDD = 100 V, Tj = 150 °C

- 4.3

µC

IRRM Reverse recovery current

(see Figure 17)

25.6

A

1. The value is rated according to Rthj-case and limited by package.

2. Pulse width limited by safe operating area

3. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Doc ID 023543 Rev 2

5/17

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