2SA1587(2003) 查看數據表（PDF） - Toshiba
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2SA1587 Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1587
2SA1587
Audio Frequency General Purpose Amplifier Applications
Unit: mm
· High voltage: VCEO = −120 V
· Excellent hFE linearity: hFE (IC = −0.1 mA)/hFE (IC = −2 mA)
= 0.95 (typ.)
· High hFE: hFE = 200~700
· Low noise: NF = 1dB (typ.), 10dB (max)
· Complementary to 2SC4117
· Small package
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
Rating
Unit
-120
V
-120
V
-5
V
-100
mA
-20
mA
100
mW
125
°C
-55~125
°C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-70
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
ICBO
VCB = -120 V, IE = 0
IEBO
VEB = -5 V, IC = 0
hFE
(Note)
VCE = -6 V, IC = -2 mA
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
VCE (sat)
fT
Cob
NF
IC = -10 mA, IB = -1 mA
VCE = -6 V, IC = -1 mA
VCB = -10 V, IE = 0, f = 1 MHz
VCE = -6 V, IC = -0.1 mA, f = 1 kHz,
Rg = 10 kW
Note: hFE classification GR (G): 200~400, BL (L): 350~700
( ) marking symbol
Min Typ. Max Unit
¾
¾ -0.1 mA
¾
¾ -0.1 mA
200
¾
700
¾
¾ -0.3
V
¾
100
¾
MHz
¾
4
¾
pF
¾
1.0
10
dB
Marking
1
2003-03-27
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