DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SA1587 查看數據表(PDF) - Toshiba

零件编号
产品描述 (功能)
生产厂家
2SA1587 Datasheet PDF : 4 Pages
1 2 3 4
2SA1587
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1587
Audio Frequency General Purpose Amplifier Applications
High voltage: VCEO = 120 V
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA)
= 0.95 (typ.)
High hFE: hFE = 200 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC4117
Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
VCEO
VEBO
IC
IB
120
V
5
V
100
mA
20
mA
Collector power dissipation
PC
100
mW
Junction temperature
Storage temperature range
Tj
125
°C
Tstg
55 to 125
°C
JEDEC
JEITA
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2E1A
Weight: 0.006 g (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
ICBO
VCB = −120 V, IE = 0
IEBO
VEB = −5 V, IC = 0
hFE
(Note)
VCE = −6 V, IC = −2 mA
VCE (sat) IC = −10 mA, IB = −1 mA
fT
VCE = −6 V, IC = −1 mA
Cob
VCB = −10 V, IE = 0, f = 1 MHz
NF
VCE = −6 V, IC = −0.1 mA, f = 1 kHz,
Rg = 10 kΩ
⎯ −0.1 μA
⎯ −0.1 μA
200
700
0.3
V
100 MHz
4
pF
1.0
10
dB
Note: hFE classification GR (G): 200 to 400, BL (L): 350 to 700
( ) marking symbol
Marking
Start of commercial production
1987-01
1
2014-03-01

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]