2SC2235-Y(TE6,F,M) 查看數據表（PDF） - Toshiba
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2SC2235-Y(TE6,F,M) Datasheet PDF : 4 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC2235
Audio Power Amplifier Applications
Driver Stage Amplifier Applications
2SC2235
Unit: mm
• Complementary to 2SA965.
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
800
mA
Base current
IB
80
mA
Collector power dissipation
PC
900
mW
Junction temperature
Storage temperature range
Tj
150
°C
Tstg
−55 to 150
°C
JEDEC
TO-92MOD
Note1: Using continuously under heavy loads (e.g. the application of high
JEITA
―
temperature/current/voltage and the significant change in
TOSHIBA
2-5J1A
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
Weight: 0.36 g (typ.)
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
2009-12-21
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