SIHD7N60E-GE3 查看數據表（PDF） - Vishay Semiconductors

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SIHD7N60E-GE3

E Series Power MOSFET

Vishay Semiconductors 

www.vishay.com

24

VDS = 480 V

20

VDS = 300 V

VDS = 120 V

16

12

8

4

0

0

10

20

30

40

Qg, Total Gate Charge (nC)

Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage

100

10

TJ = 150 °C

TJ = 25 °C

1

VGS = 0 V

0.1

0.2 0.4 0.6 0.8 1

1.2 1.4 1.6

VSD, Source-Drain Voltage (V)

Fig. 8 - Typical Source-Drain Diode Forward Voltage

100

Operation in this Area

Limited by RDS(on)

IDM = Limited

10

1

Limited by RSD * (on)

100 μs

1 ms

0.1

TC = 25 °C

TJ = 150 °C

Single Pulse

0.01

10 ms

BVDSS Limited

1

10

100

1000

VDS, Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

Fig. 9 - Maximum Safe Operating Area

SiHD7N60E

Vishay Siliconix

8

6

4

2

0

25

50

75

100

125

150

TC, Case Temperature (°C)

Fig. 10 - Maximum Drain Current vs. Case Temperature

750

725

700

675

650

625

600

575

550

525

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ, Junction Temperature (°C)

Fig. 11 - Temperature vs. Drain-to-Source Voltage

S15-0291-Rev. D, 23-Feb-15

4

Document Number: 91510

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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