2SC4132T100R 查看數據表（PDF） - ROHM Semiconductor
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2SC4132T100R Datasheet PDF : 4 Pages
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Transistors
2SC4132 / 2SD1857
Power Transistor (120V, 1.5A)
2SC4132 / 2SD1857
zFeatures
1) High breakdown voltage. (BVCEO = 120V)
2) Low collector output capacitance.
(Typ. 20pF at VCB = 10V)
3) High transition frequency. (fT = 80MHz)
4) Complements the 2SB1236.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
Collector current
Collector power
dissipation
2SC4132
2SD1857
Junction temperature
VEBO
IC
ICP
PC
Tj
5
2
3
0.5
2 ∗2
1 ∗3
150
V
A
A
∗1
W
°C
Storage temperature
Tstg
−55 to +150
°C
∗1 Single pulse Pw = 10ms
∗2 When mounted on a 40 × 40 × 0.7mm ceramic board.
∗3 When mounted on 1.7mm thick PCB having collector foll dimensions 1cm2 or more.
zExternal dimensions (Unit : mm)
2SC4132
ROHM : MPT3
EIAJ : SC-62
4.0
1.0
2.5 0.5
(1)
(2)
(3)
(1) Base(Gate)
(2) Collector(Drain)
(3) Emitter(Source)
2SD1857
6.8
2.5
0.65Max.
0.5
(1) (2) (3)
2.54 2.54
1.05 0.45
Taping specifications
ROHM : ATV
(1) Emitter
(2) Collector
(3) Base
zPackaging specifications and hFE
Type
Package
hFE
Marking
Code
Basic ordering unit (pieces)
∗ Denotes hFE
2SC4132
MPT3
PQR
CB∗
T100
1000
2SD1857
ATV
QR
−
TV2
2500
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
BVCBO
120
−
−
V
IC = 50µA
BVCEO
120
−
−
V
IC = 1mA
Emitter-base breakdown voltage
BVEBO
5
−
−
V
IE = 50µA
Collector cutoff current
ICBO
−
−
1
µA VCB = 100V
Emitter cutoff current
IEBO
−
−
1
µA VEB = 4V
Collector-emitter saturation voltage
VCE(sat)
−
−
2
V
IC/IB = 1A/0.1A
∗
DC current transfer ratio
hFE
82
−
390
−
VCE/IC = 5V/0.1A
Transition frequency
fT
−
80
−
MHz VCE = 5V , IE = −0.1A , f = 30MHz
Output capacitance
Cob
−
20
−
pF VCB = 10V , IE = 0A , f = 1MHz
∗
∗ Measured using pulse current.
Rev.A
1/3
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