2SC4132 查看數據表（PDF） - ROHM Semiconductor
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2SC4132 Datasheet PDF : 4 Pages
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Transistors
2SC4132 / 2SD1857
zElectrical characteristics curves
1.0
Ta=25°C
0.8
0.6
10mA
9mA
8mA
7mA
6mA
5mA
4mA
0.4
3mA
2mA
0.2
1mA
0
IB=0mA
0
1
2
3
4
5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Ground emitter output characteristics
10
VCE=5V
5
2
1
0.5
0.2
0.1
0.05
0.02
0.01
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Ground emitter propagation characteristics
1000
Ta=25°C
500
200
VCE=10V
100
50
5V
20
10
5
2
1
0.01 0.02
0.05 0.1 0.2
0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.3 DC current gain vs. collector current ( )
1000
500
200
Ta=100°C
100
25°C
50
−25°C
VCE=5V
20
10
5
2
1
0.01 0.02
0.05 0.1 0.2
0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current ( )
10
10
Ta=25°C
5
5
IC/IB=10
2
1
0.5
0.2
0.1
IC/IB=5V
0.05
0.02
0.01
0.01 0.02
10
0.05 0.1 0.2 0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
2
Ta= −25°C
1
0.5
VBE(sat)
25°C 100°C
0.2
Ta=100°C
0.1
0.05
−25°C
0.02 VCE(sat)
25°C
0.01
0.01 0.02 0.05 0.1 0.2
0.5 1 2
5 10
COLLECTOR CURRENT : IC (A)
Fig.5 Collector-emitter saturation voltage
vs. collector current
Fig.6
Collector-emitter saturation
Base-emitter saturation
vs.
collector
current
1000
Ta=25°C
500
VCE=5V
200
100
50
20
10
5
2
1
−1 −2
−5 −10 −20 −50 −100 −200 −500 −1000
EMITTER CURRENT : IE (mA)
Fig.7 Gain bandwidth product vs. emitter current
1000
Ta=25°C
500
f=1MHz
IE=0A
200
100
50
20
10
5
2
1
0.1 0.2
0.5 1 2
5 10 20 50 100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.8 Collector output capacitance
vs. collector-base voltage
5
2 IC Max(PULSE∗)
1
500m
200m
100m
50m
20m
10m
5m Ta=25°C
∗Single
2m nonrepetitive
1m pulse
0.1 0.2 0.5 1 2 5 10 20 50 100 200 500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.9 Safe operating area (2SC4132)
Rev.A
2/3
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