2SC5658M3T5G(2009) 查看數據表（PDF） - ON Semiconductor

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2SC5658M3T5G
(Rev.:2009)

NPN Silicon General Purpose Amplifier Transistor

ON Semiconductor 

2SC5658M3T5G, 2SC5658RM3T5G

ELECTRICAL CHARACTERISTICS (TA = 25°C)

Characteristic

Symbol

Min

Typ

Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0)

V(BR)CBO

50

−

Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0)

V(BR)CEO

50

−

Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0)

V(BR)EBO

5.0

−

Collector-Base Cutoff Current (VCB = 30 Vdc, IE = 0)

ICBO

−

−

Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IB = 0)

Collector-Emitter Saturation Voltage (Note 2)

(IC = 60 mAdc, IB = 5.0 mAdc)

IEBO

−

−

VCE(sat)

−

−

DC Current Gain (Note 2)

(VCE = 6.0 Vdc, IC = 1.0 mAdc)

(VCE = 6.0 Vdc, IC = 1.0 mAdc)

hFE

2SC5658M3T5G

2SC5658RM3T5G

120

−

215

−

Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz)

fT

Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1.0 MHz)

COB

2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.

−

180

−

2.0

Max

Unit

−

Vdc

−

Vdc

−

Vdc

0.5

mA

0.5

mA

Vdc

0.4

−

560

375

−

MHz

−

pF

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