2SD1277AP 查看數據表（PDF） - Panasonic Corporation
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2SD1277AP Datasheet PDF : 3 Pages
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Power Transistors
2SD1277, 2SD1277A
Silicon NPN triple diffusion planar type darlington
For midium speed power switching
Complementary to 2SB0951, 2SB0951A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
■ Features
φ 3.1±0.1
• High forward current transfer ratio hFE
• High-speed switching
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
1.4±0.1
0.8±0.1
1.3±0.2
0.5+–00..12
Collector-base voltage 2SD1277 VCBO
60
V
2.54±0.3
e ) (Emitter open)
2SD1277A
80
c type Collector-emitter voltage 2SD1277 VCEO
60
V
n d tage. ued (Base open)
2SD1277A
80
le s ontin Emitter-base voltage (Collector open) VEBO
7
V
a elifecyc disc Collector current
IC
8
A
n u ct ped, Peak collector current
ICP
12
A
rodu d ty Collector power
TC = 25°C PC
45
W
te tin urP tinue dissipation
2.0
g fo con Junction temperature
in n llowin d dis Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
5.08±0.5
1: Base
2: Collector
123
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
B
E
a o ludes foe, plane ■ Electrical Characteristics Ta = 25°C ± 3°C
inc typ Parameter
Symbol
Conditions
c tinued ance Collector-emitter voltage
M is con inten (Base open)
2SD1277 VCEO
2SD1277A
IC = 30 mA, IB = 0
/Dis ma Collector-base cutoff
D ance type, current (Emitter open)
2SD1277 ICBO
2SD1277A
ten ce Emitter-base cutoff current (Collector open)
ain nan Forward current transfer ratio
Md mainte Collector-emitter saturation voltage
(plane Base-emitter saturation voltage
IEBO
hFE1 *
hFE2
VCE(sat)
VBE(sat)
VCB = 60 V, IE = 0
VCB = 80 V, IE = 0
VEB = 7 V, IC = 0
VCE = 3 V, IC = 4 A
VCE = 3 V, IC = 8 A
IC = 4 A, IB = 8 mA
IC = 4 A, IB = 8 mA
Min Typ Max Unit
60
V
80
100 µA
100
2
mA
1 000
10 000
500
1.5
V
2.0
V
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 2 A, IB1 = 8 mA, IB2 = −8 mA,
0.5
µs
Storage time
tstg
VCC = 50 V
4.0
µs
Fall time
tf
1.0
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE1
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: February 2003
SJD00191BED
1
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