2SD1938FTL 查看數據表（PDF） - Panasonic Corporation
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2SD1938FTL Datasheet PDF : 3 Pages
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Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD1938(F)
Silicon NPN epitaxial planar type
For low-voltage output amplification
For muting
For DC-DC converter
0.40+–00..0150
3
Unit: mm
0.16+–00..0160
/ ■ Features
• Low ON resistance Ron
e • High forward current transfer ratio hFE
e. • Mini type package, allowing downsizing of the equipment and
c tag automatic insertion through the tape packing
n d ycle s ■ Absolute Maximum Ratings Ta = 25°C
a e lifec Parameter
Symbol Rating
Unit
ct Collector-base voltage (Emitter open) VCBO
50
V
n u du Collector-emitter voltage (Base open) VCEO
20
V
Pro Emitter-base voltage (Collector open) VEBO
25
V
te tin ur Collectorcurrent
IC
300
mA
ing fo pe . Peak collector current
ICP
500
mA
w ty tion Collector power dissipation
PC
200
mW
in n follo ance pe ed rma Junction temperature
Tj
150
°C
a o ludes inten e ty typ info n/ Storage temperature
Tstg −55 to +150 °C
1
2
(0.95) (0.95)
1.9±0.1
2.90+–00..0250
10˚
Marking symbol: 3W
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
JEDEC: SOT-346
Mini3-G1 Package
c ed inc ed ma tenanc tinued type latest o.jp/e ■ Electrical Characteristics Ta = 25°C ± 3°C
M is tinu lan ain con ed ut ic.c Parameter
Symbol
Conditions
Min Typ Max Unit
p m dis tinu abo son Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
20
V
con ed on L na Base-emitter voltage
VBE VCE = 2 V, IC = 4 mA
0.6
V
is lan isc UR .pa Collector-base cutoff current (Emitter open) ICBO VCB = 50 V, IE = 0
0.1
µA
e/D p d ing icon Emitter-base cutoff current (Collector open) IEBO VEB = 25 V, IC = 0
0.1
µA
Danc llow m Forward current transfer ratio *1
hFE VCE = 2 V, IC = 4 mA
500
2 500
ten fo .se Collector-emitter saturation voltage
VCE(sat) IC = 30 mA, IB = 3 mA
0.1
V
in isit ww Transition frequency
fT
VCB = 6 V, IE = −4 mA, f = 200 MHz
80
MHz
Ma e v ://w Collector output capacitance
as ttp (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
7
pF
Ple h ON resistance *2
Ron
1.0
Ω
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Rank classification
*2: Ron Measuremet circuit
Rank
S
T
No rank
1 kΩ
hFE
500 to 1 500 800 to 2 500
Product of no-rank classification is not marked.
500 to 2 500
IB = 1 mA
f = 1 kHz
V = 0.3 V
VB VV VA
Ron =
VB
VA − VB
× 1 000 (Ω)
Publication date: August 2004
SJC00313AED
1
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