10N80K5(2014) 查看數據表（PDF） - STMicroelectronics

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10N80K5
(Rev.:2014)

N-channel 800 V, 0.470 Ω typ., 9 A MDmesh™ K5 Power MOSFET in a TO-220FP package

STMicroelectronics 

STF10N80K5

Electrical characteristics

Table 6. Switching times

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

td(on)

tr

td(off)

tf

Turn-on delay time

Rise time

Turn-off delay time

Fall time

- 14.5 -

ns

VDD = 400 V, ID = 4.5 A,

RG= 4.7 Ω, VGS =10 V

-

11

-

ns

(see Figure 18)

-

35

-

ns

-

14

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD Source-drain current

ISDM

VSD(1)

Source-drain current (pulsed)

Forward on voltage

ISD= 9 A, VGS=0

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 9 A, VDD= 60 V

di/dt = 100 A/µs,

(see Figure 17)

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 9 A,VDD= 60 V

di/dt=100 A/µs,

Tj=150 °C

(see Figure 17)

1. Pulsed: pulse duration = 300µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

9

A

-

36 A

-

1.5 V

- 370

ns

- 4.58

µC

- 25

A

- 520

ns

- 5.88

µC

- 22.5

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max Unit

V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID= 0

30 -

-

V

The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD

capability of the device. The Zener voltage is appropriate for efficient and cost-effective

intervention to protect the device integrity. These integrated Zener diodes thus eliminate the

need for external components.

DocID026564 Rev 4

5/14

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