2SD22200RA 查看數據表（PDF） - Panasonic Corporation
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2SD22200RA Datasheet PDF : 3 Pages
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This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SD2220
Silicon NPN triple diffusion planar type darlington
Unit: mm
For low-frequency amplification
7.5±0.2
4.5±0.2
■ Features
/ • Forward current transfer ratio hFE is designed high, which is appro-
priate to the driver circuit of motors and printer hammer.
• A shunt resistor is omitted from the driver.
e • Allowing supply with the radial taping
nc d stage. ■ Absolute Maximum Ratings Ta = 25°C
le Parameter
Symbol Rating
Unit
a e cyc Collector-base voltage (Emitter open) VCBO
100
V
life Collector-emitter voltage (Base open) VCEO
80
V
n u uct Emitter-base voltage (Collector open) VEBO
5
V
rod Collector current
IC
1
A
te tin r P Peakcollectorcurrent
ICP
1.5
A
fou Collector power dissipation
PC
1.5
W
wing type tion. Junction temperature
Tj
150
°C
in n llo ce a Storage temperature
Tstg −55 to +150 °C
0.65±0.1
0.7±0.1
1.15±0.2
0.85±0.1
1.0±0.1 0.8 C
0.7±0.1
1.15±0.2
0.8 C
0.5±0.1
0.4±0.1
0.8 C 1 2 3
2.5±0.2
2.5±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Internal Connection
C
B
a o ludes fointenance typed typed t inform/en/ ≈ 200 Ω E
c ed inc ed ma tenan tinue type tes .jp ■ Electrical Characteristics Ta = 25°C ± 3°C
M is tinu lan ain con ed ut la ic.co Parameter
Symbol
Conditions
Min Typ Max Unit
p m dis tinu bo on Collector-base voltage (Emitter open)
on d n a as Collector-emitter voltage (Base open)
isc lane isco URL .pan Emitter-base voltage (Collector open)
e/D p d ing on Collector-base cutoff current (Emitter open)
Danc llow mic Emitter-base cutoff current (Collector open)
ten fo .se Forward current transfer ratio
in it w Collector-emitter saturation voltage
Ma e vis ://ww Base-emitter saturation voltage
as ttp Transition frequency
VCBO
VCEO
VEBO
ICBO
IEBO
hFE *
VCE(sat)
VBE(sat)
fT
IC = 100 µA, IE = 0
IC = 1 mA, IB = 0
IE = 100 µA, IC = 0
VCB = 25 V, IE = 0
VEB = 4 V, IC = 0
VCE = 10 V, IC = 1 A
IC = 1 A, IB = 1 mA
IC = 1 A, IB = 1 mA
VCB = 10 V, IE = −50 mA, f = 200 MHz
100
80
5
4 000
0.1
0.1
20 000
1.8
2.2
150
V
V
V
µA
µA
V
V
MHz
Ple h Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
Q
R
hFE
4 000 to 10 000 8 000 to 20 000
Publication date: May 2003
SJD00254BED
1
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