SGB20N60 查看數據表（PDF） - Infineon Technologies

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SGB20N60

Fast S-IGBT in NPT-technology

Infineon Technologies 

SGP20N60

SGB20N60, SGW20N60

Switching Characteristic, Inductive Load, at Tj=25 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=25°C,

VCC=400V,IC=20A,

VGE=0/15V,

RG=16Ω,

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

36

30

225

54

0.44

0.33

0.77

Unit

max.

46 ns

36

270

65

0.53 mJ

0.43

0.96

Switching Characteristic, Inductive Load, at Tj=150 °C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

Tj=150°C

VCC=400V,

IC=20A,

VGE=0/15V,

RG=16Ω

Energy losses include

“tail” and diode

reverse recovery.

min.

-

-

-

-

-

-

-

Value

typ.

36

30

250

63

0.67

0.49

1.12

Unit

max.

46 ns

36

300

76

0.81 mJ

0.64

1.45

3

Mar-00

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