FCP22N60N 查看數據表（PDF） - Fairchild Semiconductor
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FCP22N60N Datasheet PDF : 11 Pages
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Package Marking and Ordering Information
Part Number
FCP22N60N
FCPF22N60NT
Top Mark
FCP22N60N
FCPF22N60NT
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
ID = 1 mA, VGS = 0 V, TJ = 25oC
ID = 1 mA, VGS = 0 V, TJ = 150oC
ID = 1 mA, Referenced to 25oC
VDS = 480 V, VGS = 0 V
VDS = 480 V, TJ = 125oC
VGS = ±45 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 11 A
VDS = 20 V, ID = 11 A
Dynamic Characteristics
Ciss
Coss
Crss
Coss
Coss(eff.)
Qg(tot)
Qgs
Qgd
ESR
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Equivalent Series Resistance (G-S)
VDS = 100 V, VGS = 0 V,
f = 1 MHz
VDS = 380 V, VGS = 0 V, f = 1 MHz
VDS = 0 V to 480 V, VGS = 0 V
VDS = 380 V, ID = 11 A,
VGS = 10 V
(Note 4)
f = 1 MHz
Min.
600
650
-
-
-
-
2.0
-
-
-
-
-
-
-
-
-
-
-
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 380 V, ID = 11 A
VGS = 10 V, RG = 4.7 Ω
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 11 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, ISD = 11 A
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse width-limited by maximum junction temperature.
2. IAS = 7.3 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 22 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
-
-
-
(Note 4)
-
-
-
-
-
-
Typ.
-
-
0.68
-
-
-
3.0
0.140
22
1950
75.9
3
43.2
196.4
45
8.7
14.5
1
16.9
16.7
49
4
-
-
-
350
6
Max. Unit
-
-
-
10
100
±100
V
V/oC
μA
nA
4.0
V
0.165 Ω
-
S
-
pF
-
pF
-
pF
-
pF
-
pF
-
nC
-
nC
-
nC
-
Ω
-
ns
-
ns
-
ns
-
ns
22
A
66
A
1.2
V
-
ns
-
μC
©2009 Fairchild Semiconductor Corporation
2
FCP22N60N / FCPF22N60NT Rev. C1
www.fairchildsemi.com
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