FCP22N60N 查看數據表（PDF） - Fairchild Semiconductor
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FCP22N60N Datasheet PDF : 11 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
0.9
0.8
-100
*Notes:
1. VGS = 0V
2. ID = 1mA
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
1.0
0.5
0.0
-100
*Notes:
1. VGS = 10V
2. ID = 11A
-50
0
50 100 150 200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
for FCP22N60N
100
10μs
100μs
10
1ms
Operation in This Area
1 is Limited by R DS(on)
10ms
DC
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 10. Maximum Safe Operating Area
for FCPF22N60NT
100
10μs
100μs
10
1ms
1 Operation in This Area
is Limited by R DS(on)
10ms
0.1
0.01
1
*Notes:
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
100ms
10
100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current vs.Case Temperature
25
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [oC]
©2009 Fairchild Semiconductor Corporation
4
FCP22N60N / FCPF22N60NT Rev. C1
www.fairchildsemi.com
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