2SK2211 查看數據表（PDF） - Panasonic Corporation
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2SK2211 Datasheet PDF : 3 Pages
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Silicon MOSFETs (Small Signal)
2SK2211
Silicon N-channel MOSFET
For switching circuits
4.5±0.1
1.6±0.2
Unit: mm
1.5±0.1
■ Features
• Low ON resistance
• High-speed switching
123
• Mini type package, allowing downsizing of the sets and automatic
insertion through the magazine packing
0.4±0.08
1.5±0.1
0.5±0.08
0.4±0.04
3˚
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
45˚
3.0±0.15
Drain-source surrender voltage
e e) Gate-source surrender voltage
c e. d typ Drain current
n d stag tinue Peak drain current
le on Power dissipation *
a elifecyc disc Channel temperature
n u t ed, Storage temperature
VDSS
30
V
VGSS
±20
V
ID
1.0
A
IDP
2.0
A
PD
1.0
W
Tch
150
°C
Tstg −55 to +150 °C
roduc d typ Note) *: PC board: Copper foil of the drain portion should have a area of 1
te tin ur P tinue cm2 or more and the board thickness should be 1.7 mm.
g fo con PC absolute maximum rating without a heat shink: 0.5 W
Marking Symbol: 2M
1: Gate
2: Drain
3: Source
MiniP3-F1 Package
Internal Connection
D
G
ain onincludestyfpoell,opwlianned dis ■ Electrical Characteristics Ta = 25°C ± 3°C
c ued nce Parameter
Symbol
Conditions
M is ntin tena Drain-source surrender voltage
isco ain Gate-source surrender voltage
e/D e, m Drain-source cutoff current
D anc typ Gate-source cutoff current
inten nce Gate threshold voltage
Ma tena Forward transfer admittance *
ain Drain-source ON resistance *
laned m Short-circuit forward transfer capacitance
(p (Common source)
VDSS
VGSS
IDSS
IGSS
Vth
Yfs
RDS(on)1
RDS(on)2
Ciss
ID = 0.1 mA, VGS = 0
IGS = 0.1 mA, VDS = 0
VDS = 25 V, VGS = 0
VGS = ±15 V, VDS = 0
VDS = 5 V, ID = 1 mA
VDS = 10 V, ID = 0.5 A
VGS = 4 V, ID = 0.5 A
VGS = 10 V, ID = 0.5 A
VDS = 10 V, VGS = 0, f = 1 MHz
S
Min Typ Max Unit
30
V
±20
V
10
µA
±10 µA
0.8
2.0
V
0.5
S
0.48 0.75
Ω
0.35 0.60
87
pF
Short-circuit output capacitance
Coss
(Common source)
69
pF
Reverse transfer capacitance
Crss
(Common source)
23
pF
Turn-on delay time
Fall time
Turn-off delay time
td(on) VGS = 10 V, VDD = 10 V, ID = 0.5 A,
12
ns
tf
RL = 20 Ω
160
ns
td(off)
60
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
Publication date: March 2004
SJF00029BED
1
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