STF2N80K5(2014) 查看數據表（PDF） - STMicroelectronics

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STF2N80K5
(Rev.:2014)

N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

STD2N80K5, STF2N80K5,

STP2N80K5, STU2N80K5

N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5

Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Datasheet − production data

TAB

3

1

DPAK

TAB

3

2

1

TO-220

3

2

1

TO-220FP

TAB

3

2

1

IPAK

Figure 1. Internal schematic diagram

D(2, TAB)

Features

Order codes VDS RDS(on)max ID

STD2N80K5

STF2N80K5

800 V 4.5 Ω

2A

STP2N80K5

STU2N80K5

PTOT

45 W

20 W

45 W

• TO-220 worldwide best RDS(on)

• Worldwide best FOM (figure of merit)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

G(1)

S(3)

AM01476v1

Description

These devices are N-channel Power MOSFETs

developed using SuperMESH™ 5 technology.

This revolutionary, avalanche-rugged, high

voltage Power MOSFET technology is based on

an innovative proprietary vertical structure. The

result is a drastic reduction in on-resistance and

ultra low gate charge for applications which

require superior power density and high

efficiency.

Order codes

STD2N80K5

STF2N80K5

STP2N80K5

STU2N80K5

Table 1. Device summary

Marking

Package

2N80K5

DPAK

TO-220FP

TO-220

IPAK

Packaging

Tape and reel

Tube

February 2014

This is information on a product in full production.

DocID024993 Rev 2

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