STF2N80K5(2014) 查看數據表（PDF） - STMicroelectronics

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STF2N80K5
(Rev.:2014)

N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

STMicroelectronics 

Electrical characteristics

STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5

Figure 14. Normalized gate threshold voltage vs

temperature

VGS(th)

(norm)

1.2

ID=100 µA

AM18082v1

1.1

1

0.9

0.8

0.7

0.6

0.5

0.4

-100 -50 0 50 100 150 TJ(°C)

Figure 16. Normalized VDS vs temperature

VDS

(norm)

1.1

ID=1mA

AM18083v1

1.05

1

0.95

0.9

0.85

-100 -50 0 50 100

TJ(°C)

Figure 18. Maximum avalanche energy vs

starting TJ

EAS

(mJ)

AM18086v1

60

50

40

30

20

10

0

0 20 40 60 80 100 120 140 TJ(°C)

Figure 15. Normalized on-resistance vs

temperature

RDS(on)

(norm)

2.5

ID=1 A

VGS=10 V

AM18081v1

2

1.5

1

0.5

0

-100 -50 0 50 100 150 TJ(°C)

Figure 17. Source-drain diode forward

characteristics

VSD(V)

1

TJ=-50°C

AM18084v1

0.9

TJ=25°C

0.8

0.7

TJ=150°C

0.6

0.5

0

0.5

1

1.5

2

ISD(A)

8/23

DocID024993 Rev 2

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