M5M51008BKR 查看數據表（PDF） - MITSUBISHI ELECTRIC
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M5M51008BKR Datasheet PDF : 7 Pages
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1997-1/21
MITSUBISHI LSIs
M5M51008BFP,VP,RV,KV,KR -70VL,-10VL,-12VL,-15VL,
-70VLL,-10VLL,-12VLL,-15VLL
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Vcc
Supply voltage
VI
Input voltage
VO
Output voltage
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
* –3.0V in case of AC ( Pulse width ≤ 30ns )
Conditions
With respect to GND
Ta=25°C
Ratings
Unit
– 0.3*~4.6
V
– 0.3*~Vcc + 0.3
(Max 4.6)
V
0~Vcc
V
700
mW
0~70
°C
– 65~150
°C
DC ELECTRICAL CHARACTERISTICS (Ta=0~70°C, unless otherwise noted)
Symbol
Parameter
Test conditions
Limits
-70VL, -70VLL
-10VL, -10VLL
-12VL, -12VLL
-15VL, -15VLL
Unit
VCC=3.3±0.3V
Min Typ Max
VCC=3.0±0.3V
Min Typ Max
VIH
High-level input voltage
2.0
Vcc
+0.3V
2.0
Vcc
+0.3V
V
VIL
VOH1
Low-level input voltage
High-level output voltage 1 IOH= –0.5mA
–0.3
0.6 –0.3
0.6
V
2.4
2.4
V
VOH2
High-level output voltage 2 IOH= –0.05mA
Vcc
-0.5V
Vcc
-0.5V
V
VOL
Low-level output voltage IOL=2mA
II
Input current
VI=0~Vcc
IO
Output current in off-state
S1=VIH or S2=VIL or OE=VIH
VI/O=0~VCC
ICC1
Active supply current
(Min cycle )
ICC2
Active supply current
(1MHz)
S1=VIL,S2=VIH,
other inputs=VIH or VIL
Output-open(duty 100%)
ICC3
Stand-by current
1) S2 ≤ 0.2V
-L
2) S1 ≥ VCC–0.2V,
S2 ≥ VCC–0.2V
other inputs=0~VCC
-LL
0.4
±1
±1
20
35
3
10
60
12
0.4
V
±1
µA
±1
µA
15 30
mA
3
10
55
µA
11
ICC4
Stand-by current
* –3.0V in case of AC ( Pulse width ≤ 30ns )
S1=VIH or S2=VIL,
other inputs=0~VCC
0.33
0.33
mA
CAPACITANCE (Ta=0~70°C, unless otherwise noted)
Symbol
Parameter
CI
Input capacitance
CO
Output capacitance
Note 1: Direction for current flowing into an IC is positive (no mark).
2: Typical value is Vcc = 3V, Ta = 25°C
Test conditions
VI=GND, VI=25mVrms, f=1MHz
VO=GND,VO=25mVrms, f=1MHz
Limits
Min Typ Max
Unit
6
pF
8
pF
3
MITSUBISHI
ELECTRIC
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