1SS422 查看數據表（PDF） - Toshiba
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1SS422 Datasheet PDF : 3 Pages
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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
1SS422
High-Speed Switching Applications
• Low forward voltage VF = 0.23 V (typ.) @ IF = 5 mA
• Small package suitable for mounting on a small space
1SS422
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage
Reverse voltage
Maximum (peak) forward current
Average forward current
Surge current (10 ms)
Power dissipation
Junction temperature
Storage temperature range
Operating temperature range
VRM
VR
IFM
IO
IFSM
P
Tj
Tstg
Topr
35
V
30
V
200*
mA
100*
mA
1*
A
100*
mW
125
°C
−55 to 125
°C
−40 to 100
°C
1.ANODE1
2.CATHODE2
3.CATHODE1
ANODE2
Note: Using continuously under heavy loads (e.g. the application of high JEDEC
―
temperature/current/voltage and the significant change in
JEITA
―
temperature, etc.) may cause this product to decrease in the
TOSHIBA
1-2S1C
reliability significantly even if the operating conditions (i.e. operating Weight: 0.0024 g (typ.)
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: This is the absolute maximum rating for a single diode. Where two diodes are used, the absolute maximum rating
per diode is 75% that for the single diode.
Electrical Characteristics (Ta = 25°C)
Characteristics
Forward voltage
Reverse current
Total capacitance
(between Cathode and Anode)
Symbol
VF (1)
VF (2)
VF (3)
IR (1)
IR (2)
CT
Test Condition
IF = 1 mA
IF = 5 mA
IF = 100 mA
VR = 10 V
VR = 30 V
VR = 0, f = 1 MHz
Min Typ. Max Unit
― 0.18 ―
― 0.23 ―
V
― 0.38 0.5
―
―
20
μA
―
―
50
―
15
―
pF
Marking
U9
Start of commercial production
2004-04
1
2014-03-01
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