2N06L50 查看數據表（PDF） - Infineon Technologies
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2N06L50 Datasheet PDF : 9 Pages
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IPG20N06S2L-50
13 Avalanche energy4)
E AS = f(T j)
parameter: I D
150
14 Drain-source breakdown voltage
V BR(DSS) = f(T j); I D = 1 mA
65
125
62
5A
100
59
75
56
10 A
50
15 A
53
25
0
25
50
75 100 125 150 175
T j [°C]
50
-60 -20
20
60 100 140 180
T j [°C]
15 Typ. gate charge4)
V GS = f(Q gate); I D = 20 A pulsed
parameter: V DD
16 Gate charge waveforms
12
V GS
11 V 44 V
Qg
10
8
6
V g s(th)
4
2
Q g (th)
0
0
3
6
9
12
15
Q gate [nC]
Q gs
Rev. 1.0
page 7
Q sw
Q gd
Q gate
2009-09-07
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