020N06N 查看數據表（PDF） - Infineon Technologies
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020N06N Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=100 A; V GS=10 V
10 Typ. gate threshold voltage
V GS(th)=f(T j); V GS=V DS
IPI020N06N
4.5
5
4
3.5
4
3
2.5
max
3
1430 mA
2
typ
1.5
143 µA
2
1
1
0.5
0
-60 -20
20
60 100 140 180
Tj [°C]
0
-60 -20 20
60 100 140 180
Tj [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz
104 10000
Ciss
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
103
103
1000
Coss
102
102
100
101
10
0
Rev.2.2
Crss
20
40
VDS [V]
25 °C
175 °C
101
100
60
0
page 6
0.5
1
1.5
2
VSD [V]
2012-12-20
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