020N06N 查看數據表（PDF） - Infineon Technologies
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020N06N Datasheet PDF : 9 Pages
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13 Avalanche characteristics
I AS=f(t AV); R GS=25 W
parameter: T j(start)
1000
100
10
100 °C
125 °C
25 °C
14 Typ. gate charge
V GS=f(Q gate); I D=100 A pulsed
parameter: V DD
12
IPI020N06N
30 V
10
12 V
48 V
8
6
4
1
1
10
100
tAV [µs]
15 Drain-source breakdown voltage
V BR(DSS)=f(T j); I D=1 mA
2
1000
0
0
20
40
60
80
Qgate [nC]
16 Gate charge waveforms
100 120
70
V GS
Qg
66
62
58
V gs(th)
54
50
-60 -20 20
60 100 140 180
Tj [°C]
Q g(th)
Q gs
Rev.2.2
page 7
Q sw
Q gd
Q gate
2012-12-20
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