FDA20N50_F109 查看數據表（PDF） - Fairchild Semiconductor
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FDA20N50_F109 Datasheet PDF : 8 Pages
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FDA20N50_F109
N-Channel UniFETTM MOSFET
500 V, 20 A, 230 m
Features
• RDS(on) = 230 m (Max.) @ VGS = 10 V, ID = 10 A
• Low Gate Charge (Typ. 45.6 nC)
• Low Crss (Typ. 27 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• PDP TV
• Uninterruptible Power Supply
• AC-DC Power Supply
March 2013
Description
UniFETTM MOSFET is Fairchild Semiconductor®’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
D
G
G
D
S
TO-3P
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25C)
- Continuous (TC = 100C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25C)
- Derate above 25C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient, Max.
S
FDA20N50_F109
500
22
13.2
88
30
1110
22
28.0
20
280
2.3
-55 to +150
300
FDA20N50_F109
0.44
40
©2012 Fairchild Semiconductor Corporation
1
FDA20N50_F109 Rev.C0
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/C
C
C
Unit
C/W
C/W
www.fairchildsemi.com
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